ABB 5SHY3545L0010 3BHB013088R0001 IGCT Module – Vogi international

Vogi international

ABB 5SHY3545L0010 3BHB013088R0001 IGCT Module

Module Number 5SHY3545L0010
Order Number 3BHB013088R0001
Unit Price $1500
Country Of Origin Switzerland
Weight 0.91KG
Certificate C/O from the Chamber of Commerce
C/Q from the Manufacturer
Warranty 12 Months
Inventory Qty 10

The ABB 5SHY3545L0010 is a high-power IGCT (Integrated Gate-Commutated Thyristor) semiconductor device. It is primarily engineered for advanced power conversion and control in high-voltage applications. Its core use is within industrial medium-voltage drives and power infrastructure systems.

Parameter Category

Specification

Device Type

Asymmetric IGCT

Part Number

5SHY3545L0010

Repetitive Blocking Voltage (VDRM)

4500 V

Maximum Turn-Off Current (ITGQ)

4000 A

Maximum Average On-State Current (ITAV)

1050 A

On-State Voltage (VT0)

1.85 V

Critical Rate of Rise of Off-State Voltage (dv/dt)

1000 V/μs

Gate Unit Compatibility

Specific ABB

Housing / Package

Press-Pack

Beneficiary's Bank: CITIBANK N.A.
Beneficiary address:Champion Tower,Three Garden Road,Central,Hong Kong
Beneficiary: Vogi International Trading Co., Limited
Account No.: 395714900
Bank Code: 006 Branch Code: 391
Swift Code:CITIHKHX (CITIHKHXXXX * If 11 characters are required)
Payment Term:T/T

Details:

5SHY3545L0010Product FEAtures

The defining product characteristics of the 5SHY3545L0010 are its exceptional robustness and very low conduction losses. This specific 5SHY3545L0010 component is designed for demanding switching operations, offering high reliability under extreme electrical stress. The press-pack housing of the 5SHY3545L0010 facilitates efficient double-sided cooling, which is critical for maintaining performance in high-power stacks. Furthermore, the 5SHY3545L0010 boasts a high threshold for overcurrent and surge conditions, making it a preferred choice for mission-critical installations.

5SHY3545L0010Comparison

When comparing the 5SHY3545L0010 to other power semiconductors like standard IGBTs or older GTO thyristors, its advantages are clear. The 5SHY3545L0010 offers superior efficiency with lower switching and conduction losses compared to equivalent IGBT modules, leading to cooler operation and higher system efficiency. Against GTOs, the 5SHY3545L0010 provides vastly simplified gate drive requirements and much faster switching speeds. A potential direct replacement could be an HV-IGBT of a similar rating, but the 5SHY3545L0010 often retains an advantage in the lowest total losses for very high-current applications, though gate drive design is more complex. The trade-off often involves system-level design choices between efficiency and drive circuit complexity.

5SHY3545L0010application cases

Globally, the 5SHY3545L0010 sees extensive use in large-scale industrial and energy projects. A significant application is within the drives systems for powerful compressors, pumps, and fans in the oil and gas sector, as well as in water treatment plants and mining operations, where its reliability ensures continuous process operation. Beyond industrial motors, the 5SHY3545L0010 is also heavily utilized in solid-state circuit breakers and specialized power supply units for test benches and simulation systems. Its deployment in such critical foreign engineering projects underscores its value in infrastructure that demands uncompromising performance and uptime.

5SHY3545L0010
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